Title :
High Power LDMOS Transistor for RF-Amplifiers
Author :
Kashif, A. ; Svensson, C. ; Wahab, Q.
Author_Institution :
Linkoping Univ., Linkoping
Abstract :
We designed simulated and optimized laterally diffused Si-MOSFET (LDMOS) transistors in Sentaurus TCAD software. By introducing excess interface charge density at the RESURF (reduced surface field) region, a power density 1.5 W/mm with a PAE (power added efficiency) of 45% at 3 GHz were obtained. The gain was 20.3 dB. These results show the enhancement in RF performance by introducing excess interface charge density at the RESURF region.
Keywords :
UHF power amplifiers; logic CAD; power MOSFET; radiofrequency amplifiers; RESURF; RF-amplifiers; Sentaurus TCAD software; Silicon laterally diffused Si-MOSFET; frequency 3 GHz; high power LDMOS transistor; interface charge density; power 1.5 W; power added efficiency; reduced surface field; Bipolar transistors; Doping; Immune system; Linearity; MOSFETs; Parasitic capacitance; Power amplifiers; Power generation; Radio frequency; Thermal resistance; Power MOSFET; Power amplifiers;
Conference_Titel :
Applied Sciences & Technology, 2007. IBCAST 2007. International Bhurban Conference on
Conference_Location :
Islamabad
Print_ISBN :
978-969-8741-04-4
Electronic_ISBN :
978-969-8741-04-4
DOI :
10.1109/IBCAST.2007.4379896
