High frequency performance of carbon nanotube-based spiral inductors

Author

D´Amore, M. ; Maradei, Francesca ; Cruciani, Silvano ; Feliziani, Mauro

Author_Institution

Sapienza Univ. of Rome, Rome, Italy

fYear

2013

fDate

2-6 Sept. 2013

Firstpage

765

Lastpage

770

Abstract

A physically based circuit model of on-chip spiral inductor made of a single-wall carbon nanotube (SWCNT) bundle is investigated. The equivalent single conductor (ESC) approach is used to model the CNT bundle. The internal frequency-dependent resistance and inductance are computed by a finite element method (FEM). The eddy-current effect in the silicon substrate is taken into account by the complex image theory. The analytical expressions of the substrate capacitances and conductance are validated by FEM. Performance of different integrated inductors in the gigahertz range are investigated.

Keywords

carbon nanotubes; elemental semiconductors; finite element analysis; inductors; silicon; CNT bundle; FEM; Si; carbon nanotube-based spiral inductors; complex image theory; eddy-current effect; equivalent single conductor; finite element method; high frequency performance; integrated inductors; internal frequency-dependent resistance; on-chip spiral inductor; physically based circuit model; silicon substrate; single-wall carbon nanotube bundle; substrate capacitance; substrate conductance; Capacitance; Inductance; Inductors; Resistance; Silicon; Spirals; Substrates; Integrated spiral inductor; carbon nanotube bundle; filters; high frequency; quality factor; skin and proximity effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC EUROPE), 2013 International Symposium on

Conference_Location

Brugge

ISSN

2325-0356

Type

conf

Filename

6653402