Title :
Negative bias temperature instability on Si-passivated Ge-interface
Author :
Aoulaiche, M. ; Kaczer, B. ; Jaeger, B. De ; Houssa, M. ; Martens, K. ; Degraeve, R. ; Roussel, P. ; Mitard, J. ; Gendt, S. De ; Maes, H.E. ; Groeseneken, G. ; Meuris, M. ; Heyns, M.M.
Author_Institution :
IMEC, Leuven
fDate :
April 27 2008-May 1 2008
Abstract :
Germanium pMOSFETs with silicon-passivated interface (Ge/Si/SiO2/HfO2) are investigated for negative bias temperature instability (NBTI). Even though a high initial interface state density is measured, the stack shows a robustness toward NBTI stress, and the 10 year lifetime is ensured with a gate voltage overdrive VG-Vth = -1.2 V.
Keywords :
MOSFET; elemental semiconductors; germanium; hafnium compounds; passivation; semiconductor device reliability; silicon; silicon compounds; Ge-Si-SiO2-HfO2; NBTI lifetime; gate voltage; germanium pMOSFET; initial interface state density; negative bias temperature instability stress; silicon-passivated interface; Density measurement; Germanium; Hafnium oxide; Interface states; MOSFETs; Negative bias temperature instability; Niobium compounds; Robustness; Stress measurement; Titanium compounds; Ge; MOSFET; NBTI; future pMOSFETs; high-k dielectric; metal gate; surface passivation;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558912
