Title :
Microfabrication of magnetic tunnel junctions using Al as bottom conduction electrode
Author :
Han, X.F. ; Li, F.F. ; Wang, W.N. ; Zhao, S.F. ; Peng, Z.L. ; Zhan, W.S. ; Han, B.S.
Author_Institution :
Inst. of Phys., Chinese Acad. of Sci., Beijing, China
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, the MTJs with high magnetoresistance and low resistance were fabricated with the layer structures of Ta/Al (5 nm/20 nm)/Ni/sub 79/Fe/sub 21//Ir/sub 22/Mn/sub 78/(10 nm)/Co/sub 75/Fe/sub 25/(4 nm)/Al(0.8 nm)-oxide/Co/sub 75/Fe/sub 25/(4 nm)/Ni/sub 79/Fe/sub 21/(20 nm)/Ta(5 nm) by using lithography method and Al as conduction electrode.
Keywords :
aluminium; annealing; antiferromagnetic materials; cobalt alloys; ferromagnetic materials; interface magnetism; interface structure; iridium alloys; iron alloys; magnetisation; manganese alloys; nickel alloys; tantalum; tunnelling magnetoresistance; 0.8 nm; 10 nm; 20 nm; 4 nm; 5 nm; Ta-Al-NiFe-IrMn-CoFe-AlO-CoFe-NiFe-Ta; conduction electrode; lithography; magnetic tunnel junctions; magnetoresistance; microfabrication; Annealing; Antiferromagnetic materials; Artificial intelligence; Electric breakdown; Electrodes; Information processing; Magnetic tunneling; Physics; Power capacitors; Voltage;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230634
