Designing of High Efficiency Power Amplifier Based on Physical Model of SiC MESFET in TCAD

Author

Azam, Saad ; Svensson, C. ; Wahab, Q.

Author_Institution

Linkoping Univ., Linkoping

fYear

2007

fDate

8-11 Jan. 2007

Firstpage

40

Lastpage

43

Abstract

The pulse input Class C power amplifier response of an enhanced version of a previously fabricated and tested SiC MESFET 11 are studied using a new technique to its physical model in TCAD. The device is simulated at 5% duty cycle pulse for Gain (dB), Power density (W/mm), power loss and power added efficiency (PAE %) at 500 MHz and 1 GHz. The results are then correlated to the device features in DC and RF I-V characteristics. A maximum PAE of 80% at 500 MHz with 36.9 dB power gain and power density of 1.07 W/mm is achieved.

Keywords

Schottky gate field effect transistors; power amplifiers; semiconductor device models; silicon compounds; technology CAD (electronics); wide band gap semiconductors; SiC; SiC MESFET; TCAD; frequency 500 MHz; gain 36.9 dB; power added efficiency; power amplifier; power density; power gain; power loss; Gain; High power amplifiers; Linearity; MESFETs; Power amplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon carbide; Switches; Class-C; MESFET; New technique; Power Amplifier; Silicon Carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences & Technology, 2007. IBCAST 2007. International Bhurban Conference on

Conference_Location

Islamabad

Print_ISBN

978-969-8741-04-4

Electronic_ISBN

978-969-8741-04-4

Type

conf

DOI

10.1109/IBCAST.2007.4379905

Filename

4379905