Determination of lattice parameters of SCS nanobeam in process of tensile test using MEMS actuator

Author

Hongjiang Zeng ; Tie Li ; Qinhua Jin ; Yuelin Wang ; FangFang Xu

Author_Institution

State Key Labs. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2011

fDate

25-27 May 2011

Firstpage

1

Lastpage

4

Abstract

We present a novel experimental method for observing the lattice behavior of single crystal silicon (SCS) nanobeam in process of tensile testing. A TEM in-situ nanobeam tensile testing device has been fabricated and the lattice parameters of SCS nanobeam of different tensile stress have been measured using selected-area electron diffraction (SAED). The results suggest that the trends of the lattice parameters consists with the increasing tensile stress in the SCS nanobeam, and a certain degree of distortion of lattice and movements of crystal dislocations could happen during SCS nanobeam tensile testing.

Keywords

beams (structures); electron diffraction; elemental semiconductors; microactuators; nanotechnology; silicon; tensile strength; tensile testing; MEMS actuator; SAED; SCS nanobeam; TEM in-situ nanobeam tensile testing device; crystal dislocation; lattice parameter; selected-area electron diffraction; single crystal silicon; tensile stress; Actuators; Crystals; Diffraction; Lattices; Nanoscale devices; Silicon; Testing; MEMS actuator; SCS nanobeam; lattice parameter; tensile test;

fLanguage

English

Publisher

ieee

Conference_Titel

Assembly and Manufacturing (ISAM), 2011 IEEE International Symposium on

Conference_Location

Tampere

ISSN

Pending

Print_ISBN

978-1-61284-342-1

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/ISAM.2011.5942299

Filename

5942299