Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

Author

Lee, Sangmin ; Vetury, Ramakrishna ; Brown, Jeffrey D. ; Gibb, Shawn R. ; Cai, Will Z. ; Sun, Jinming ; Green, Daniel S. ; Shealy, Jeff

Author_Institution

RFMD, Charlotte, NC

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

446

Lastpage

449

Abstract

We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I_dss, the 60% confidence interval on estimate of E_a was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 10⁶, 3.0 x 10⁷] hours. To compare the impact of dc and RF stress, additional experiments were conducted on a smaller sample set and the results indicate that the impact of dc and RF stress is not significantly different.

Keywords

aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; AlGaN-GaN; DC stress; HEMT technology; RF stress; reliability assessment; voltage 48 V; Aluminum gallium nitride; Gallium nitride; HEMTs; High power amplifiers; Life estimation; Radio frequency; Silicon carbide; Stress; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558926

Filename

4558926