Title :
Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications
Author :
Lee, Sangmin ; Vetury, Ramakrishna ; Brown, Jeffrey D. ; Gibb, Shawn R. ; Cai, Will Z. ; Sun, Jinming ; Green, Daniel S. ; Shealy, Jeff
Author_Institution :
RFMD, Charlotte, NC
fDate :
April 27 2008-May 1 2008
Abstract :
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3 temperature 48 V dc stress tests and using a failure criterion of 10% reduction in Idss, the 60% confidence interval on estimate of Ea was [2.00,2.94] eV and the predicted 60% confidence interval on estimate of MTTF at Tj=200 degC was [1.0 x 106, 3.0 x 107] hours. To compare the impact of dc and RF stress, additional experiments were conducted on a smaller sample set and the results indicate that the impact of dc and RF stress is not significantly different.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; AlGaN-GaN; DC stress; HEMT technology; RF stress; reliability assessment; voltage 48 V; Aluminum gallium nitride; Gallium nitride; HEMTs; High power amplifiers; Life estimation; Radio frequency; Silicon carbide; Stress; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558926
