DocumentCode :
2051208
Title :
Thin film cracking in plastic packages-analysis, model and improvements
Author :
Foehringer, R. ; Golwalkar, S. ; Eskildsen, S. ; Altimari, S.
Author_Institution :
Intel Corp., Folsom, CA, USA
fYear :
1991
fDate :
11-16 May 1991
Firstpage :
759
Lastpage :
765
Abstract :
Describes the physical characteristics of the thin-film cracking (TFC) phenomenon and a model which explains the interactions among the key variables such as die corner layout style, package materials, die size, die thickness, and passivation topology. Data were tabulated on several plastic products to determine if there was any commonality. Comparison was also made between layouts for different products using optical microscopy and SEM/EDX where necessary. It was determined that four main factors (layout style, materials, die thickness, and passivation type) impact thin-film cracking to different degrees. A stress factor versus cycles plot from several configurations were developed which can help predict potential jeopardy as a function of variables identified above. This plot resembles the Coffin-Manson law and depicts safe and unsafe regions for factors that modulate temperature cycling stress. It appears that two possible mechanisms help improve TFC performance. On one hand tiny sacrificial structures help interlock the molding compound and contain the damage, whereas significant decoupling between molding compound and the passivation seems to reduce the overall damaging stress
Keywords :
X-ray chemical analysis; optical microscopy; packaging; passivation; scanning electron microscopy; thermal stress cracking; Coffin-Manson law; SEM/EDX; decoupling; die corner layout style; die size; die thickness; layout style; optical microscopy; package materials; passivation topology; passivation type; plastic packages; sacrificial structures; stress factor; temperature cycling stress; thin-film cracking; Optical films; Optical materials; Optical microscopy; Passivation; Plastic films; Plastic packaging; Plastic products; Scanning electron microscopy; Stress; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0012-2
Type :
conf
DOI :
10.1109/ECTC.1991.163965
Filename :
163965
Link To Document :
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