DocumentCode :
2051209
Title :
A reliability-aware RF power amplifier design for CMOS radio chip integration
Author :
Ruberto, Mark ; Degani, Ofir ; Wail, Shay ; Tendler, Alex ; Fridman, Amir ; Goltman, Gennady
Author_Institution :
Mobile Wireless Group, Intel Corp., Haifa
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
536
Lastpage :
540
Abstract :
For significant cost reduction in Wi-Fi platforms, the power amplifier must be integrated into the CMOS radio RFIC. This paper surveys how this most challenging circuit was carefully engineered to mitigate aging effects, ESD, and thermal issues for deployment into our product platforms. Experimental results are also presented here.
Keywords :
CMOS integrated circuits; cost reduction; electrostatic discharge; integrated circuit reliability; microwave integrated circuits; microwave power amplifiers; wireless LAN; CMOS radio chip integration; ESD; RFIC; Wi-Fi platforms; aging effects; cost reduction; reliability-aware RF power amplifier design; Aging; Costs; Electrostatic discharge; Integrated circuit reliability; Power amplifiers; Power engineering and energy; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Reliability engineering; CMOS; ESD; RFIC; Wi-Fi; hot carrier; power amplifier; reliability; thermal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558942
Filename :
4558942
Link To Document :
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