Title :
Scanning near-field photon emission microscopy
Author :
Isakov, D. ; Geinzer, T. ; Tio, A. ; Phang, JCH ; Zhang, Y. ; Balk, LJ
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fDate :
April 27 2008-May 1 2008
Abstract :
A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source.
Keywords :
MOSFET; scanning electron microscopy; actual emission source; far-field PEM; n-MOSFET; photon emission distribution; scanning near-field photon emission microscope; Apertures; Failure analysis; Integrated circuit technology; Optical microscopy; Optical scattering; Optical sensors; Photonic integrated circuits; Probes; Spatial resolution; Stimulated emission;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558947
