Effects of hot hole trapping in GaN HEMTs

Author

Chen, Hsiang ; Lai, John ; Preech, P. ; Li, Guann-Pyng

Author_Institution

Dept. of Electr. Eng., Univ. of California, Irvine, Irvine, CA

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

621

Lastpage

622

Abstract

Hot hole trapping was mechanism was reported for GaN HEMTs from observations of electroluminescence changes and threshold voltage shifts. Passivation effect was studied through EL on the surface traps or surface states and proved to be effective in real-time monitoring of HEMT operation.Hole trapping leading to an increase in the drain to source current, and a decrease in the threshold voltage have also been shown.

Keywords

III-V semiconductors; Schottky barriers; electroluminescence; electron traps; gallium compounds; high electron mobility transistors; hole traps; passivation; surface states; wide band gap semiconductors; GaN; HEMTs; Schottky barrier; band diagram; drain current; electroluminescence; electron trapping; hot hole trapping; off-state breakdown stress; passivation surface; source current; surface states; threshold voltage; Aluminum gallium nitride; Electric breakdown; Electron traps; Gallium nitride; HEMTs; Hot carriers; MODFETs; Passivation; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558956

Filename

4558956