Title :
High-robust ESD protection structure with embedded SCR in high-voltage CMOS process
Author :
Lai, Tai-Hsiang ; Ker, Ming-Dou ; Chang, Wei-Jen ; Tang, Tien-Hao ; Su, Kuan-Cheng
Author_Institution :
ESD Eng. Dept., United Microelectron. Corp., Hsinchu
fDate :
April 27 2008-May 1 2008
Abstract :
The dependence of device structures and layout parameters on ESD robustness of HV MOSFETs in high-voltage 40-V CMOS process has been investigated by device simulation and verified in silicon test chips. It was demonstrated that a new ESD protection structure with p-type SCR embedded into the HV PMOS has the highest ESD robustness in a given 40-V CMOS process.
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; HV MOSFETs; Si; electrostatic discharges; embedded SCR; high-voltage CMOS process; p-type ESD protection structure; silicon controlled rectifiers; silicon test chips; voltage 40 V; CMOS process; CMOS technology; Circuits; Electrostatic discharge; MOS devices; MOSFETs; Protection; Robustness; Thyristors; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558959
