DocumentCode
2051658
Title
A gate-controllable high-voltage SCR device with high performance in ESD protection and latch-up immunity
Author
Chien, Tuo-Hsin ; Hsu, Klaus Y J
Author_Institution
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
629
Lastpage
630
Abstract
A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while avoiding the conventionally annoying latch-up problem in SCR under normal circuit operation condition. The behavior of the proposed device has been studied by simulations and verified by real implementation in a 0.5-mum high-voltage (30 V) CMOS process.
Keywords
CMOS integrated circuits; electrostatic discharge; thyristors; ESD protection; gate-controllable high-voltage SCR device; high-voltage CMOS process; integrated control nMOS; latch-up immunity; silicon-controlled rectifier; size 0.5 micron; voltage 30 TV; Anodes; CMOS process; Cathodes; Centralized control; Circuit simulation; Electrostatic discharge; MOS devices; Protection; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558960
Filename
4558960
Link To Document