Title :
Shallow level analysis in irradiated silicon
Author :
Borchi, E. ; Bruzzi, M. ; Li, Z. ; Pirollo, S.
Author_Institution :
Dipt. di Energetica, Firenze Univ., Italy
Abstract :
Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 KΩcm have been irradiated with a 1 MeV neutron-equivalent fluence up to 4×1014 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1013 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex
Keywords :
elemental semiconductors; neutron effects; p-n junctions; silicon radiation detectors; thermally stimulated currents; 1 MeV; Si; low temperature thermally stimulated current measurements; neutron-equivalent fluence; nominal starting resistivity; phosphorous removal; shallow level analysis; shallow level concentrations; silicon p+/n/n+ junctions; vacancy-phosphorous complex; Boron; Conductivity; Current measurement; Lattices; Performance evaluation; Silicon; Space charge; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5696-9
DOI :
10.1109/NSSMIC.1999.845789
