• DocumentCode
    2051671
  • Title

    Shallow level analysis in irradiated silicon

  • Author

    Borchi, E. ; Bruzzi, M. ; Li, Z. ; Pirollo, S.

  • Author_Institution
    Dipt. di Energetica, Firenze Univ., Italy
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    806
  • Abstract
    Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 KΩcm have been irradiated with a 1 MeV neutron-equivalent fluence up to 4×1014 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1013 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex
  • Keywords
    elemental semiconductors; neutron effects; p-n junctions; silicon radiation detectors; thermally stimulated currents; 1 MeV; Si; low temperature thermally stimulated current measurements; neutron-equivalent fluence; nominal starting resistivity; phosphorous removal; shallow level analysis; shallow level concentrations; silicon p+/n/n+ junctions; vacancy-phosphorous complex; Boron; Conductivity; Current measurement; Lattices; Performance evaluation; Silicon; Space charge; Temperature distribution; Temperature sensors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-5696-9
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1999.845789
  • Filename
    845789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2051671