DocumentCode :
2051680
Title :
The influence of oxygen doping of channel of organic field-effect transistor based on nickel phthalocyanine on the output parameters
Author :
Stakhira, Pavlo ; Cherpak, Vladyslav ; Pakhomov, Georgiy ; Volynyuk, Dmytro ; Dutchak, Zoya ; Hladun, Mykhaylo
Author_Institution :
Lviv Polytech. Nat. Univ., Lviv, Ukraine
fYear :
2010
fDate :
23-27 Feb. 2010
Firstpage :
334
Lastpage :
334
Abstract :
The influence of nickel phthalocyanine (NiPc) thin film doping by oxygen on electric parameters of organic transistor structures of Si/SiO2/NiPc/Au was investigated. The complex analysis of structure and electrical&physical characteristics of thin films of organic low-molecular semiconductor after influence of oxygen during seven days was carried out.
Keywords :
MIS devices; elemental semiconductors; gold; organic field effect transistors; organic semiconductors; semiconductor doping; silicon; silicon compounds; thin film transistors; Si-SiO2-Au; electric parameters; low-molecular semiconductor; nickel phthalocyanine; organic field-effect transistor; oxygen doping; thin film; Charge carriers; Conductivity; Nickel; OFETs; Organic semiconductors; Semiconductor device doping; Semiconductor thin films; Sputtering; Substrates; X-ray diffraction; OFET; organic semiconductors; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
Type :
conf
Filename :
5445953
Link To Document :
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