Title :
Electrothermal model for MIM TaON capacitors during ESD HBM pulses
Author :
Verchiani, M. ; Bouyssou, E. ; Cantin, F. ; Anceau, C. ; Ranson, P.
Author_Institution :
STMicroelectronics, Tours
fDate :
April 27 2008-May 1 2008
Abstract :
This work focuses on ESD HBM robustness of metal insulator metal TaON capacitors. An electrothermal model including a complete leakage current description and a thermal RC network is proposed to explain the ESD experimental results. The leakage current description is based on a Poole-Frenkel mechanism combined with a TDDB theory.
Keywords :
MIM devices; Poole-Frenkel effect; RC circuits; capacitors; electrostatic discharge; semiconductor device breakdown; tantalum compounds; ESD HBM pulses; Poole-Frenkel mechanism; TDDB theory; TaON; electrothermal model; human body model; leakage current; metal insulator metal capacitors; thermal RC network; time dependent dielectric breakdown; Dielectrics; Electrostatic discharge; Electrothermal effects; Impedance; Leakage current; MIM capacitors; Predictive models; Robustness; Temperature; Thermal resistance; CVS; ESD HBM; MIM capacitors; TaON; dielectric breakdown; electrothermal modeling; thermal breakdown;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558961
