Title :
Critical optical power density in PIN-photodiodes
Author :
Meister, M. ; Reinhard, M. ; Liebold, U. ; Kirsten, D. ; Nuernbergk, D.M.
Author_Institution :
Inst. for Microelectron. & Mechatron. Syst. GmbH, Ilmenau, Germany
Abstract :
PIN photodiodes are often used in optical integrated circuits. Although they can feature a very good RF-performance, this can be effected by the optical power density of the incident light. The influence of this effect on the RF-performance of PIN photodiodes is described. When a critical optical power density in the epi-layer is exceeded the 3dB frequencies are cut off. An analytical equation is derived to describe the effect. The results are compared to RF measurements and verified by numerical simulation.
Keywords :
integrated optics; p-i-n diodes; photodiodes; PIN photodiodes; RF measurements; RF-performance; analytical equation; critical optical power density; epi-layer; optical integrated circuits; Equations; Integrated optics; Mathematical model; Measurement by laser beam; Optical saturation; Optical sensors; Photodiodes; PIN; Photodiode; RF behavior; critical optical power; high current space charge effect; laser spot;
Conference_Titel :
Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
Conference_Location :
Chemnitz
Print_ISBN :
978-1-4673-1590-6
Electronic_ISBN :
978-1-4673-1589-0
DOI :
10.1109/SSD.2012.6197902
