Title :
Adarlington-based SCR ESD protection device for high-speed applications
Author :
Sarbishaei, Hossein ; Lubana, Sumanjit Singh ; Semenov, Oleg ; Sachdev, Manoj
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Waterloo, ON
fDate :
April 27 2008-May 1 2008
Abstract :
Silicon controlled rectifiers (SCRs) are used extensively in high frequency applications. To reduce their first breakdown voltage, they are used with different triggering mechanisms. In this paper, a novel ESD protection device is proposed that can reduce the first breakdown voltage of SCR to 3V without any extra triggering devices.
Keywords :
bipolar transistors; electrostatic discharge; thyristors; trigger circuits; Darlington-based SCR; ESD protection device; bipolar transistors; breakdown voltage; silicon controlled rectifiers; triggering mechanisms; voltage 3 V; Application software; Avalanche breakdown; Bipolar transistors; CMOS technology; Electrostatic discharge; Equivalent circuits; Frequency; Parasitic capacitance; Protection; Thyristors;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558962
