Title :
Analytical model of radiation response in FDSOI MOSFETS
Author :
McLain, Michael L. ; Barnaby, Hugh J. ; Adell, Philippe C.
Author_Institution :
Dept. Of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
April 27 2008-May 1 2008
Abstract :
It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted silicon-on-insulator (FDSOI) MOSFET technologies. In this paper, an analytical model for these radiation response characteristics is proposed. The charge coupling between the front and back gates is demonstrated analytically using closed-form expressions for the back-gate threshold voltage as a function of trapped charge in the buried oxide and front gate voltage.
Keywords :
MOSFET; radiation effects; silicon-on-insulator; tunnelling; Si; back gates; back-gate threshold voltage; band-to-band tunneling; buried oxide voltage; charge coupling; closed-form expressions; front gate voltage; radiation response; silicon-on-insulator MOSFET technologies; trapped charge buildup; Analytical models; Charge carrier processes; Electron traps; Leakage current; MOSFETs; Propulsion; Silicon on insulator technology; Space technology; Threshold voltage; Tunneling; Total ionizing dose; band-to-band tunneling; buried oxide; fully-depleted SOI; oxide trapped charge;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558967
