Title :
Current leakage evolution in partially gate-ruptured power MOSFETs
Author :
Scheick, Leif ; Selva, Luis ; Chen, Yuan ; Edmonds, Larry
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fDate :
April 27 2008-May 1 2008
Abstract :
The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.
Keywords :
MOSFET circuits; leakage currents; power amplifiers; amplifiers; current leakage evolution; partially gate-ruptured power MOSFETs; single-event gate rupture; Circuits; Degradation; Laboratories; Leakage current; MOSFETs; Nanoscale devices; Resistance heating; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558968
