Title :
Roles of high-k and interfacial layers on TDDB reliability studied with HfAlOX/SiO2 stacked gate dielectrics
Author :
Okada, Kenji ; Ota, Hiroyuki ; Hirano, Akito ; Ogawa, Arito ; Nabatame, Toshihide ; Toriumi, Akira
Author_Institution :
MIRAI-ASET, Tsukuba
fDate :
April 27 2008-May 1 2008
Abstract :
The objective of this paper is to clarify the primary roles of high-k layer and of interfacial layer on the TDDB lifetime in order to provide a guideline for realizing adequate TDDB reliability and also for the further high-k material selection. HfAlO(N)/SiO(N) and HfON/SiON stacked gate dielectrics has been fabricated with various deposition conditions and thicknesses. Electrical characteristics were evaluated with n+ and p+ poly-Si gated n- and p-channel MOSFETs. It was found that TDDB reliability depends of the thickness of high-k layer, regardless of the nitrogen concentration.
Keywords :
MOSFET; annealing; electric breakdown; hafnium compounds; high-k dielectric thin films; interface structure; silicon compounds; HfAlOX-SiO2; HfON-SiON; MOSFETs; annealing; dielectric breakdown; high-k dielectrics; interfacial layers; layer-by-layer deposition; stacked gate dielectrics; Breakdown voltage; Charge carrier processes; Crystallization; Dielectric breakdown; Electric breakdown; High K dielectric materials; High-K gate dielectrics; Production; Semiconductor device modeling; Stress;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558976
