• DocumentCode
    2052001
  • Title

    Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics

  • Author

    Kang, C.Y. ; Park, C.S. ; Heh, D. ; Young, C. ; Kirsch, P. ; Park, H.B. ; Choi, R. ; Bersuker, G. ; Yang, J.W. ; Lee, B.H. ; Lichtenwalner, J. ; Jur, J.S. ; Kingon, A.I. ; Jammy, R.

  • Author_Institution
    SEMATECH, Austin, TX
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    663
  • Lastpage
    664
  • Abstract
    La-doped HfSiO samples showed lower Vth and Igate, which was attributed to the dipole formation at the high-k/SiO2 interface. With increasing SiOx content, significant mobility degradation was observed, most likely due to additional La- related charges in the interfacial layer. La-doped devices demonstrate better immunity in the PBTI test and low charge trapping efficiency compared to the control HfSiO.
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; lanthanum; semiconductor device reliability; semiconductor doping; HfSiOx; La-doped Hf-silicate gate dielectrics; PBTI test; charge trapping; high-k-metal gate nMOSFET; reliability characteristics; Degradation; Dielectric substrates; Doping; Electrodes; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558977
  • Filename
    4558977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2052001