Title :
Performance and reliability characteristics of the band edge high-k/metal gate nMOSFETs with La-doped Hf-silicate gate dielectrics
Author :
Kang, C.Y. ; Park, C.S. ; Heh, D. ; Young, C. ; Kirsch, P. ; Park, H.B. ; Choi, R. ; Bersuker, G. ; Yang, J.W. ; Lee, B.H. ; Lichtenwalner, J. ; Jur, J.S. ; Kingon, A.I. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX
fDate :
April 27 2008-May 1 2008
Abstract :
La-doped HfSiO samples showed lower Vth and Igate, which was attributed to the dipole formation at the high-k/SiO2 interface. With increasing SiOx content, significant mobility degradation was observed, most likely due to additional La- related charges in the interfacial layer. La-doped devices demonstrate better immunity in the PBTI test and low charge trapping efficiency compared to the control HfSiO.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; lanthanum; semiconductor device reliability; semiconductor doping; HfSiOx; La-doped Hf-silicate gate dielectrics; PBTI test; charge trapping; high-k-metal gate nMOSFET; reliability characteristics; Degradation; Dielectric substrates; Doping; Electrodes; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Stress;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558977
