Title :
Dielectric conduction mechanisms of ULK/CU interconnects: Low field conduction mechanism and determination of defect density
Author :
Verriere, V. ; Guedj, C. ; Arnal, V. ; Sylvestre, A.
Author_Institution :
STMicroelectronics, Crolles
fDate :
April 27 2008-May 1 2008
Abstract :
The low field conduction mechanism in advanced Cu/ULK interconnects is consistent with 3D phonon-assisted hopping conduction in exponential band-tails. From these measurements, a defectivity parameter proportional to the density of defects near Fermi level is deduced. In addition, the relative fraction of interface versus bulk defect states may be obtained using measurements for several dielectric thicknesses. This parameter may be obtained at nominal operating conditions, it is therefore a good parameter for realistic reliability studies of advanced interconnects.
Keywords :
Fermi level; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; 3D phonon-assisted hopping conduction; Fermi level; ULK/Cu interconnects; defect density; defectivity parameter; dielectric conduction; dielectric thickness; low field conduction; realistic reliability; Amorphous materials; Degradation; Dielectric measurements; Dielectrics and electrical insulation; Leakage current; Plasma temperature; Shape; Tail; Testing; Thermal conductivity;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558985
