DocumentCode
2052213
Title
Use of bidirectional current stress for in depth analysis of electromigration mechanism
Author
Doyen, L. ; Arnaud, L. ; Federspiel, X. ; Waltz, P. ; Wouters, Y.
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
681
Lastpage
682
Abstract
Electromigration under bidirectional current is studied on dual damascene copper interconnects for the 65 nm node. Physical analyses confirm void location a both ends of the line and copper transport over long distance. Resistance evolution was studied and correlated to void healing/growth kinetics. Finally, we show the interest of bidirectional tests to study multimodal failure mode.
Keywords
copper; electromigration; integrated circuit interconnections; voids (solid); Cu; bidirectional current stress; copper transport; dual damascene copper interconnects; electromigration; multimodal failure mode; resistance evolution; void healing-growth kinetics; void location; Circuit testing; Copper; Current density; Electrical resistance measurement; Electromigration; Electron mobility; Failure analysis; Integrated circuit interconnections; Microelectronics; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558986
Filename
4558986
Link To Document