Title :
Method of research of electro-physical characteristics of semiconductor structures
Author :
Rudenko, Natalija ; Gurba, Olexandr
Author_Institution :
Nat. Tech. Univ. of Ukraine Kiev Polytech. Inst., Kiev, Ukraine
Abstract :
An effective method to study the electrophysical characteristics of semiconductor structures based on measuring the distribution of concentration of charged centers in low doped region of p-n transition.
Keywords :
III-V semiconductors; aluminium compounds; electrical conductivity transitions; electron-hole recombination; gallium compounds; indium compounds; nanostructured materials; semiconductor heterojunctions; space charge; wide band gap semiconductors; (AlxGa1-x)0.5In0.5P; AlyGa1-yN-InxGa1-xN-GaN; barrier capacity; charge recombination concentration profile; charged center concentration distribution; electrophysical characteristics; low doped region; nanoscale structures; p-n transition; semiconductor heterostructures; semiconductor structures; space charge; Amplitude modulation; Capacitance measurement; Charge carriers; Current measurement; Doping profiles; Gallium nitride; Semiconductor device doping; Semiconductor diodes; Space charge; Voltage; Barrier capacity; concentration profile of charge; recombnation; semiconductor structures; spase charge region;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
