Title :
About expediency of use of the reemission of photons for increasing light intensity of multilayer LEDs that can be exposed to radiation
Author :
Irkha, Vasily ; Gorbachev, Victor
Author_Institution :
Odessa Nat. Acad. of Telecommun. named after A. S. Popov, Odessa, Ukraine
Abstract :
On the basis of the obtained experimental regular dependences the probable causes of the degradation of emission of multilayer GaAlAs-LEDs after gamma irradiation are considered.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gamma-ray effects; light emitting diodes; multilayers; GaAlAs; degradation; emission intensity; gamma irradiation; intermediate layer; light intensity; multilayer LED; photon reemission; Charge carriers; Current-voltage characteristics; Degradation; Electroluminescence; Gamma rays; Light emitting diodes; Nonhomogeneous media; Radiative recombination; Spontaneous emission; Stimulated emission; Degradation; Gamma radiation hardness; Multilayer structures; Optical emitters;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
