DocumentCode
2052372
Title
About expediency of use of the reemission of photons for increasing light intensity of multilayer LEDs that can be exposed to radiation
Author
Irkha, Vasily ; Gorbachev, Victor
Author_Institution
Odessa Nat. Acad. of Telecommun. named after A. S. Popov, Odessa, Ukraine
fYear
2010
fDate
23-27 Feb. 2010
Firstpage
356
Lastpage
356
Abstract
On the basis of the obtained experimental regular dependences the probable causes of the degradation of emission of multilayer GaAlAs-LEDs after gamma irradiation are considered.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gamma-ray effects; light emitting diodes; multilayers; GaAlAs; degradation; emission intensity; gamma irradiation; intermediate layer; light intensity; multilayer LED; photon reemission; Charge carriers; Current-voltage characteristics; Degradation; Electroluminescence; Gamma rays; Light emitting diodes; Nonhomogeneous media; Radiative recombination; Spontaneous emission; Stimulated emission; Degradation; Gamma radiation hardness; Multilayer structures; Optical emitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location
Lviv-Slavske
Print_ISBN
978-966-553-875-2
Electronic_ISBN
978-966-553-901-8
Type
conf
Filename
5445975
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