DocumentCode :
2052499
Title :
Variation-tolerant cache by two-layer error control codes
Author :
Meilin Zhang ; Ampadu, Paul
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA
fYear :
2013
fDate :
2-4 Oct. 2013
Firstpage :
161
Lastpage :
166
Abstract :
In this paper, we explore a two-layer error control codes (ECC), which combines rectangular and Hamming product codes in an efficient way to address process and supply voltage variation in cache. Two-layer ECC employs simple rectangular codes for each cache line to detect error, while loading extra Hamming product codes check bits in the case of error detection; thus enabling process and supply voltage variation-tolerant cache design. Our analysis and experimental results shows that compared to complex 4-way 4EC5ED, two-layer ECC can increase Mean-Error-To-Failure by more than 2×, improve reliability by two order of magnitude under process variation, and reduce residual failure rate by one order of magnitude under supply voltage variation. Compared to simple 8-way SECDED, two-layer ECC shows a 28x-133x improvement in METF, and residual failure rate are improved furthermore.
Keywords :
Hamming codes; VLSI; cache storage; error correction codes; error detection codes; failure analysis; power supply circuits; product codes; reliability; 4-way 4EC5ED; Hamming product codes check bits; METF; cache line; error detection; magnitude under process variation; mean-error-to-failure; rectangular codes; rectangular product code; residual failure rate; supply voltage variation-tolerant cache design; two-layer ECC; two-layer error control codes; Discrete Fourier transforms; Fault tolerance; Fault tolerant systems; Nanotechnology; Very large scale integration; ECC; Fault-tolerant; VLSI; cache; process variation; supply voltage variation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on
Conference_Location :
New York City, NY
ISSN :
1550-5774
Print_ISBN :
978-1-4799-1583-5
Type :
conf
DOI :
10.1109/DFT.2013.6653600
Filename :
6653600
Link To Document :
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