Title :
Synthesis of GaN Nanorods with Vertebra-like Morphology
Author :
Gao, Haiyong ; Li, Jinmin
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000degC for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(III) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zn sublimated at 1000degC. Ga2O3 was reducted to Ga 2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system
Keywords :
Fourier transform spectra; III-V semiconductors; X-ray diffraction; gallium compounds; infrared spectra; nanostructured materials; reduction (chemical); scanning electron microscopy; sputter deposition; sublimation; wide band gap semiconductors; 1000 C; 20 min; EDS; FTIR; Fourier transform infrared method; GaN; NH3; SEM; X-ray diffraction; XRD; Zn; ammonia; energy dispersive spectroscopy; nanorods synthesis; reduction; rf magnetron sputtering; scanning electron microscopy; silicon substrates; sublimation; thin films; vertebra-like morphology; Dispersion; Fourier transforms; Gallium nitride; Morphology; Scanning electron microscopy; Spectroscopy; Sputtering; X-ray diffraction; X-ray scattering; Zinc oxide; Ga2O3/ZnO films; GaN nanorods; morphology; nitriding;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
DOI :
10.1109/NEMS.2006.334685
