Title :
Modeling of threshold voltage in three-dimensional SOI-structures
Author :
Kogut, I.T. ; Scherbyak, V.M.
Abstract :
This paper proposed an original approach to the analysis of the threshold voltage metal-oxide-semiconductor structures based on local three-dimensional SOI-structures.
Keywords :
MOSFET; silicon-on-insulator; MOS-transistor; cylinder shaped gate; metal-oxide-semiconductor structures; three-dimensional SOI-structures; threshold voltage modeling; ¿-shaped profile gate; CMOS integrated circuits; Crystallization; Electric potential; Integrated circuit manufacture; Manufacturing industries; Manufacturing processes; Mathematical analysis; Mathematical model; Silicon; Threshold voltage; II-shaped profile gate; SOI MOS-transistor; cylinder shaped gate; three-dimensional SOI-structure; threshold voltage;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
