Title :
Effect of crystal-originated particles (COPs) on ULSI process integrity
Author :
Po-Ying Chen ; Chen, Po-Ying ; Tsai, M.H. ; Jing, M.H. ; Lin, T.-C. ; Yeh, Wen Kuan
Author_Institution :
Dept. of Inf. Eng., I-Shou Univ., Kaohsiung
fDate :
April 27 2008-May 1 2008
Abstract :
The effects of crystal-originated particles (COPs) on ultra-thin gate oxide for recent ultra large-scale integration (ULSI) devices were studied. Various Czochralski (CZ) silicon wafers were prepared by controlling the pulling speed of silicon ingots to determine the relationships between COPs and the breakdown characteristics of the ultra thin-gate oxide.
Keywords :
ULSI; crystal growth from melt; semiconductor technology; Czochralski silicon wafer; ULSI process integrity; crystal-originated particle; ultra large-scale integration device; ultra-thin gate oxide; Atomic force microscopy; Atomic measurements; Dielectric breakdown; Force measurement; Large scale integration; MOS capacitors; Oxidation; Scanning electron microscopy; Silicon; Ultra large scale integration;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4559001
