Title :
A new device reliability evaluation method for overdrive voltage circuit application
Author :
Cheng, Tao ; Lee, M.Z. ; Yang, M.T.
Author_Institution :
Manuf. Eng. Div., Technol. Dev. Dept., MediaTek Inc., Hsinchu
fDate :
April 27 2008-May 1 2008
Abstract :
A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability can be passed the specification and well characterized, even under 8V at drain side overdrive in some circuit application.
Keywords :
CMOS integrated circuits; integrated circuit reliability; CMOS oxide reliability; device reliability evaluation method; overdrive voltage circuit application; voltage 3.3 V; voltage 8 V; Battery charge measurement; Circuits; Current measurement; Electric breakdown; Hot carrier injection; Human computer interaction; MOS devices; Stress; Turning; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4559003
