DocumentCode
2052604
Title
A new device reliability evaluation method for overdrive voltage circuit application
Author
Cheng, Tao ; Lee, M.Z. ; Yang, M.T.
Author_Institution
Manuf. Eng. Div., Technol. Dev. Dept., MediaTek Inc., Hsinchu
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
715
Lastpage
716
Abstract
A new device reliability evaluation method is reported for the circuit application under voltage overdrive. Through an appropriate methodology shown in this paper, the 3.3V CMOS oxide reliability can be passed the specification and well characterized, even under 8V at drain side overdrive in some circuit application.
Keywords
CMOS integrated circuits; integrated circuit reliability; CMOS oxide reliability; device reliability evaluation method; overdrive voltage circuit application; voltage 3.3 V; voltage 8 V; Battery charge measurement; Circuits; Current measurement; Electric breakdown; Hot carrier injection; Human computer interaction; MOS devices; Stress; Turning; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4559003
Filename
4559003
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