• DocumentCode
    2052632
  • Title

    Special feature of forming solid planar diffusion a source for submicron structure

  • Author

    Berezhansky, Volodymyr

  • fYear
    2010
  • fDate
    23-27 Feb. 2010
  • Firstpage
    364
  • Lastpage
    364
  • Abstract
    Solid planar diffusion a source for forming submicron structure VLSI are given in this paper.
  • Keywords
    VLSI; borosilicate glasses; diffusion; plasma applications; B2O3-SiO2; borosilicate glass; ionic-plasma processing; large-scale integrated circuit; solid planar diffusion; submicron structure VLSI; Boron; Dielectric films; Glass; Impurities; Nitrogen; Plasma temperature; Production; Semiconductor films; Silicon; Very large scale integration; borazine; ionic-plasma processing technique; silane;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
  • Conference_Location
    Lviv-Slavske
  • Print_ISBN
    978-966-553-875-2
  • Electronic_ISBN
    978-966-553-901-8
  • Type

    conf

  • Filename
    5445984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2052632