DocumentCode :
2052632
Title :
Special feature of forming solid planar diffusion a source for submicron structure
Author :
Berezhansky, Volodymyr
fYear :
2010
fDate :
23-27 Feb. 2010
Firstpage :
364
Lastpage :
364
Abstract :
Solid planar diffusion a source for forming submicron structure VLSI are given in this paper.
Keywords :
VLSI; borosilicate glasses; diffusion; plasma applications; B2O3-SiO2; borosilicate glass; ionic-plasma processing; large-scale integrated circuit; solid planar diffusion; submicron structure VLSI; Boron; Dielectric films; Glass; Impurities; Nitrogen; Plasma temperature; Production; Semiconductor films; Silicon; Very large scale integration; borazine; ionic-plasma processing technique; silane;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
Type :
conf
Filename :
5445984
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2052632
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