• DocumentCode
    2052744
  • Title

    Investigation of the influence of process and design on soft error rate in integrated CMOS technologies thanks to Monte Carlo simulation

  • Author

    Weulersse, C. ; Bougerol, A. ; Hubert, G. ; Wrobel, F. ; Carriere, T. ; Gaillard, R. ; Buard, N.

  • Author_Institution
    EADS IW, Suresnes
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    729
  • Lastpage
    730
  • Abstract
    This work shows the capabilities of Monte Carlo simulation based on nuclear database to identify the influence of device parameters and process on Single Cell Upset and Multicell Upset rates in integrated bulk and SOI CMOS technologies up to 65 nm. The method is applicable both to SRAM and logic cells, and is valid for high energy and thermal neutrons.
  • Keywords
    CMOS integrated circuits; Monte Carlo methods; Monte Carlo simulation; integrated CMOS technologies; logic cells; multicell upset rates; single cell upset rate; soft error rate; thermal neutrons; CMOS logic circuits; CMOS process; CMOS technology; Databases; Error analysis; Neutrons; Process design; Random access memory; Silicon on insulator technology; Sliding mode control; CMOS; Monte Carlo simulation; Single Events; Soft Error Rate (SER); neutrons; nuclear database;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4559010
  • Filename
    4559010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2052744