DocumentCode
2052957
Title
Developing and testing RF modules in CMOS for ISM and SRD bands using PXI platform
Author
Bieske, Björn ; Heinrich, Klaus
Author_Institution
Inst. fur Mikroelektron. - und Mechatronik-Syst., Gemeinnutzige GmbH, Ilmenau, Germany
fYear
2012
fDate
20-23 March 2012
Firstpage
1
Lastpage
6
Abstract
The ever increasing possibilities in computing provide reliable results of simulations of devices and circuits. To extract and verify sets of parameters and models it is necessary to realize measurements in the field of RF up to several GHz. The 2.4 GHz ISM band and the 868/915 MHz band are well suited for short range data transmission. In addition to proprietary solutions different standards have been established: WLAN, Bluetooth® and ZigBee™ [1, 2]. The performance of analog and RF circuits is increasingly sensitive to sub-micron manufacturing technologies. Standard and primitive devices that are well characterized and modeled are essential to realize stable working designs without silicon iterations. RF performance improvements driven by structure sizes of 0,18 μm and below enable standard CMOS to meet specifications for many RF systems [3]. Characterization measurements can be done on evaluation boards (fig. 2) using packaged devices or on wafer using a wafer prober. The DUT can be contacted by impedance controlled RF ACP probes DC needles or test fixtures (fig. 3). Different measurement setups have been established using appropriate measurement equipment according to the kind of RF cells. Modular PXI systems offer extensive possibilities to set up test systems for different applications and complex measurements. The advantages are reduced space, energy consumption and cabling.
Keywords
Bluetooth; CMOS integrated circuits; Zigbee; electronic engineering computing; radiofrequency integrated circuits; wireless LAN; Bluetooth; CMOS; DUT; ISM; PXI platform; RF circuit; RF module; SRD band; WLAN; ZigBee; analog circuit; frequency 2.4 GHz; frequency 868 MHz; frequency 915 MHz; short range data transmission; size 0.18 micron; submicron manufacturing technology; wafer prober; Current measurement; Hardware; Probes; Radio frequency; Semiconductor device measurement; Temperature measurement; Voltage-controlled oscillators; LNA; PLL; PXI test system; RF IPs; RF cells; RF measurements; VCO; device characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
Conference_Location
Chemnitz
Print_ISBN
978-1-4673-1590-6
Electronic_ISBN
978-1-4673-1589-0
Type
conf
DOI
10.1109/SSD.2012.6197945
Filename
6197945
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