DocumentCode :
2053090
Title :
Thermal Conductivity of InGaAs/InGaAsP Superlattices measured with 3ω Method
Author :
Chen, Zhen ; Yang, Juekuan ; Chen, Yunfei
Author_Institution :
Dept. of Mech. Eng., Southeast Univ., Nanjing
fYear :
2006
fDate :
18-21 Jan. 2006
Firstpage :
283
Lastpage :
286
Abstract :
The thermal conductivity of InGaAs/InGaAsP superlattices with different periods was measured from 100 K to 320 K using 3ω method. For all the superlattices, the thermal conductivity was found to decrease with temperature increase. For the superlattice with different periods, when the period thickness is smaller than the mean free path (mfp) of phonons, the thermal conductivity was found to decrease with a increase in period thickness and exhibit a minimum at certain period. But the thermal conductivity was found to increase monotonically with the increasing period thickness when the period is longer than the mfp, which implies that the interface thermal resistance dominated in phonon transport in this case. The experimental and theoretical results show that, with the increase in period thickness, the dominant mechanism of phonons transport in superlattices will shift from wave theory to particle theory, which is critical for the cutoff of phonons and will be a foundation for the design of superlattice structures
Keywords :
gallium arsenide; indium alloys; indium compounds; interface phonons; lattice constants; semiconductor superlattices; thermal conductivity; thermal resistance; 100 to 320 K; 3ω method; InGaAs; InGaAs-InGaAsP superlattice thermal conductivity; InGaAsP; interface thermal resistance; particle theory; phonon cutoff; phonon mean free path; phonon transport; superlattice period thickness; superlattice structure design; wave theory; Conducting materials; Conductivity measurement; Indium gallium arsenide; Phonons; Superlattices; Thermal conductivity; Thermal engineering; Thermal resistance; Thermoelectricity; Transistors; 3ω method; superlattice; thermal conductivity; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
Type :
conf
DOI :
10.1109/NEMS.2006.334723
Filename :
4134953
Link To Document :
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