DocumentCode
2053090
Title
Thermal Conductivity of InGaAs/InGaAsP Superlattices measured with 3ω Method
Author
Chen, Zhen ; Yang, Juekuan ; Chen, Yunfei
Author_Institution
Dept. of Mech. Eng., Southeast Univ., Nanjing
fYear
2006
fDate
18-21 Jan. 2006
Firstpage
283
Lastpage
286
Abstract
The thermal conductivity of InGaAs/InGaAsP superlattices with different periods was measured from 100 K to 320 K using 3ω method. For all the superlattices, the thermal conductivity was found to decrease with temperature increase. For the superlattice with different periods, when the period thickness is smaller than the mean free path (mfp) of phonons, the thermal conductivity was found to decrease with a increase in period thickness and exhibit a minimum at certain period. But the thermal conductivity was found to increase monotonically with the increasing period thickness when the period is longer than the mfp, which implies that the interface thermal resistance dominated in phonon transport in this case. The experimental and theoretical results show that, with the increase in period thickness, the dominant mechanism of phonons transport in superlattices will shift from wave theory to particle theory, which is critical for the cutoff of phonons and will be a foundation for the design of superlattice structures
Keywords
gallium arsenide; indium alloys; indium compounds; interface phonons; lattice constants; semiconductor superlattices; thermal conductivity; thermal resistance; 100 to 320 K; 3ω method; InGaAs; InGaAs-InGaAsP superlattice thermal conductivity; InGaAsP; interface thermal resistance; particle theory; phonon cutoff; phonon mean free path; phonon transport; superlattice period thickness; superlattice structure design; wave theory; Conducting materials; Conductivity measurement; Indium gallium arsenide; Phonons; Superlattices; Thermal conductivity; Thermal engineering; Thermal resistance; Thermoelectricity; Transistors; 3ω method; superlattice; thermal conductivity; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location
Zhuhai
Print_ISBN
1-4244-0139-9
Electronic_ISBN
1-4244-0140-2
Type
conf
DOI
10.1109/NEMS.2006.334723
Filename
4134953
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