DocumentCode
2053130
Title
MEMS structures for pervasive device applications
Author
Niu, Feng ; Cornett, Ken ; Chiou, Wayne ; Bancroft, Tim ; Dea, Bob O.
Author_Institution
Motorola Labs, Plantation, FL, USA
Volume
3
fYear
2001
fDate
2001
Firstpage
1636
Abstract
New MEMS resonating structures using standard CMOS IC processes are proposed and analytical models for proposed structures are established. The static/dynamic analysis for these MEMS resonating structures using developed models and commercially available simulation tools is conducted and results are presented. Theoretical formulas governing the performance critical parameters are derived for the MEMS trench resonators and the results show that the performance of these MEMS resonators as measured by the resonator capacitance ratio improves with shrinking resonator size. These intrinsically low cost and small size devices are a key enabling technology for pervasive device applications
Keywords
CMOS integrated circuits; micromechanical devices; resonators; MEMS resonating structures; MEMS trench resonators; analytical models; commercially available simulation tools; enabling technology; micro electromechanical systems; performance critical parameters; pervasive device; standard CMOS IC processes; static/dynanidc analysis; Analytical models; Application specific integrated circuits; CMOS integrated circuits; CMOS process; Circuit simulation; Costs; Micromechanical devices; Space technology; Transducers; Wireless sensor networks;
fLanguage
English
Publisher
ieee
Conference_Titel
Systems, Man, and Cybernetics, 2001 IEEE International Conference on
Conference_Location
Tucson, AZ
ISSN
1062-922X
Print_ISBN
0-7803-7087-2
Type
conf
DOI
10.1109/ICSMC.2001.973519
Filename
973519
Link To Document