Modelling and simulation of carbon nanotubes (CNT) for nanoelectronics device applications

Author

Thirunavukkarasu, Vasanthan ; Priyadharsini, K. ; Priya, P. Aruna ; Thiruvadigal, D.J.

Author_Institution

Dept. of Phys. & Nanotechnol., SRM Univ., Chennai, India

fYear

2013

fDate

21-22 Feb. 2013

Firstpage

1027

Lastpage

1029

Abstract

Our aim is to model carbon nanotubes using Atomistix Tool Kit (ATK) software and simulate it. The CNT is designed toward fabrication of two-port and/or a three-port molecular electronic devices (FET). CNT design is functionalized with suitable molecules so that the functionalization of cnt as a logic citcuit is achieved by theroetical analysis for electronic transport, effect of gate potential, optimization of geometry, functionalization of different molecules,in particular transmission spectrum and I-V Characteristics are studied in detail.

Keywords

carbon nanotube field effect transistors; carbon nanotubes; electrical conductivity; molecular electronics; nanoelectronics; C; CNT functionalization; FET; I-V characteristics; atomistix tool kit software; carbon nanotubes; electronic transport; gate potential; geometry optimization; logic circuit; molecule functionalization; nanoelectronic device applications; theroetical analysis; three-port molecular electronic devices; transmission spectra; two-port molecular electronic devices; CNTFETs; Carbon; Carbon nanotubes; Electrodes; Logic gates; Quantum dots; ATK software; Carbon nanotubes; Molecular electronic devices; electron transport; logic function; transmission spectrum;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Communication and Embedded Systems (ICICES), 2013 International Conference on

Conference_Location

Chennai

Print_ISBN

978-1-4673-5786-9

Type

conf

DOI

10.1109/ICICES.2013.6508318

Filename

6508318