DocumentCode :
2053804
Title :
Oxidation of Silicon Electrochemically Etched Microchannels Arrays
Author :
Wu, Junxu ; Wang, Lianwei ; Chen, Xiaoming ; Zheng, Mingjie ; Liu, Weili ; Song, Zhitang ; Sarro, P.M.
Author_Institution :
Dept. of Electron. Eng., East China Normal Univ., Shanghai
fYear :
2006
fDate :
18-21 Jan. 2006
Firstpage :
399
Lastpage :
402
Abstract :
Macroporous silicon technology is an important method to fabricate microchannels on silicon. The formation of insulator layer on the sidewall of the channels is necessary for electrical isolation or passivation of the surface. Oxidation is one of the preferred options. In this paper we investigate the effect of various oxidation processes on the smoothness of the sidewalls of the high aspect ratio macropores. Using thermal oxidation with a combination of dry and wet steps, the shape and structures inside silicon microchannels can be changed after oxidation to certain thickness. To keep the surface inside the microchannels smooth, it is only possible to get oxide layer with limited thickness by oxidation in microchannel if the channel size is very small
Keywords :
electrochemistry; etching; microchannel plates; micromechanical devices; porous materials; silicon; surface roughness; Si; electrical isolation; macropores; macroporous silicon technology; microchannel fabrication; oxidation process; silicon microchannnels; surface passivation; thermal oxidation; Contracts; Dielectrics and electrical insulation; Dry etching; Electrochemical processes; Isolation technology; Microchannel; Oxidation; Passivation; Silicon on insulator technology; Systems engineering and theory; macroporous silicon; microchannel; oxidation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
Type :
conf
DOI :
10.1109/NEMS.2006.334767
Filename :
4134979
Link To Document :
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