Title :
Ge-on-Si photodetectors with 33 GHz bandwidth implemented by RPCVD
Author :
Suh, Dongwoo ; Kim, Sanghoon ; Kim, Gyungock ; Kim, In Gyoo ; Joo, Jiho
Author_Institution :
RF&Opt. Devices Res. Dept., ETRI, Daejeon
Abstract :
We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 mum-diameter at a wavelength of 1550 nm.
Keywords :
chemical vapour deposition; photodetectors; Ge-Si; RPCVD; bandwidth 33 GHz; photodetectors; reduced pressure chemical vapor deposition; size 20 mum; wavelength 1550 nm; Atomic force microscopy; Bandwidth; CMOS technology; Chemical vapor deposition; Optical devices; Optical waveguides; PIN photodiodes; Photodetectors; Silicon; Substrates;
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
DOI :
10.1109/ECOC.2008.4729210
