DocumentCode :
2053978
Title :
Via processing options for MCM-D fabrication: excimer laser ablation vs. reactive ion etching
Author :
Tessier, T.G. ; Hoffman, W.F. ; Stafford, J.W.
Author_Institution :
Motorola Inc., Schaumburg, IL, USA
fYear :
1991
fDate :
11-16 May 1991
Firstpage :
827
Lastpage :
834
Abstract :
The use of reactive ion etching and excimer laser ablation processes for the etching of vias through thick layers of dielectric (up to 25 μm thick) in multichip module fabrication is evaluated. A comparison of possible masking schemes is presented. Typical etch results obtained by these techniques are shown and compared. A throughput analysis of these two via fabrication techniques for use in a high-volume multichip module substrate facility is presented. Results obtained suggest that laser processing is a viable alternative to reactive ion etching for multichip module substrate via fabrication
Keywords :
hybrid integrated circuits; integrated circuit technology; laser beam machining; masks; sputter etching; 25 micron; MCM-D fabrication; excimer laser ablation; masking schemes; multichip module; reactive ion etching; substrate via fabrication; thick dielectric layers; via etching; via processing options; Costs; Dielectric substrates; Dielectric thin films; Drilling; Etching; Laser ablation; Manufacturing; Micromachining; Multichip modules; Optical device fabrication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-0012-2
Type :
conf
DOI :
10.1109/ECTC.1991.163975
Filename :
163975
Link To Document :
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