Title :
Features of forming sub-micron Gaas-structures on Schottky field-effect transistor (SFT)
Author :
Novosyadly, Stepan ; Voznyak, Yuri ; Vartsabiuk, Andriy
Author_Institution :
Dept. of Radiophysic & Electron., Precarpathian Nat. Univ. nmd V. Stefanyk, Ivao-Frankivsk, Ukraine
Abstract :
This article describes a problem about small Schottky barrier height for p-channel GaAs field-effect transistors complementary pair.
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; gallium arsenide; Schottky barrier height; Schottky field-effect transistor; forming submicron GaAs-structures; p-channel field-effect transistors; Circuits; FETs; Gallium arsenide; Heat treatment; Logic testing; Plasma temperature; Schottky barriers; Schottky diodes; Schottky gate field effect transistors; Tungsten; GaAs; Gallium arsenide; Schottky transistors; field-effect transistor; integral circuits;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
