Spin-polarized nanodevice for future information technologies

Author

Mukherjee, S. ; Chantrell, R. ; Wu, X. ; Bain, J.A. ; Carley, R. ; Howard, K. ; Litvinov, D. ; Khizroev, S.

Author_Institution

Seagate Res., Pittsburgh, PA, USA

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this paper, an experimental and theoretical study of a continuous magnetic junction of the nanoscale size is presented. Such nanosize junction was created in a thin film Permalloy (Ni/Fe 80/20) layer via focused ion beam etching (FIB) etching. The specially developed FIB process allows for creating continuous magnetic bridges with dimensions in the nanoscale range. The geometry of the structure is chosen with the purpose to create a condition for triggering a magnetic wall, as the external magnetic field is applied.

Keywords

Permalloy; focused ion beam technology; magnetic domain walls; magnetic thin film devices; nanostructured materials; spin polarised transport; sputter etching; NiFe; continuous magnetic bridges; external magnetic field; focused ion beam etching; information technology; magnetic junction; magnetic wall triggering; nanosize junction; spin-polarized nanodevice; thin film Permalloy layer; Anisotropic magnetoresistance; Large Hadron Collider; Magnetic anisotropy; Magnetic devices; Magnetic fields; Magnetic sensors; Nanoscale devices; Perpendicular magnetic anisotropy; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230771

Filename

1230771