Title :
Spin-polarized nanodevice for future information technologies
Author :
Mukherjee, S. ; Chantrell, R. ; Wu, X. ; Bain, J.A. ; Carley, R. ; Howard, K. ; Litvinov, D. ; Khizroev, S.
Author_Institution :
Seagate Res., Pittsburgh, PA, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, an experimental and theoretical study of a continuous magnetic junction of the nanoscale size is presented. Such nanosize junction was created in a thin film Permalloy (Ni/Fe 80/20) layer via focused ion beam etching (FIB) etching. The specially developed FIB process allows for creating continuous magnetic bridges with dimensions in the nanoscale range. The geometry of the structure is chosen with the purpose to create a condition for triggering a magnetic wall, as the external magnetic field is applied.
Keywords :
Permalloy; focused ion beam technology; magnetic domain walls; magnetic thin film devices; nanostructured materials; spin polarised transport; sputter etching; NiFe; continuous magnetic bridges; external magnetic field; focused ion beam etching; information technology; magnetic junction; magnetic wall triggering; nanosize junction; spin-polarized nanodevice; thin film Permalloy layer; Anisotropic magnetoresistance; Large Hadron Collider; Magnetic anisotropy; Magnetic devices; Magnetic fields; Magnetic sensors; Nanoscale devices; Perpendicular magnetic anisotropy; Testing; Transistors;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230771
