Reduction of micro-defects in the inter-metal dielectrics (IMD) chemical mechanical polishing (CMP) for ULSI applications

Author

Park, Sung-Woo ; Kim, Sang-Yong ; Yong-Jin Sin

Author_Institution

Dept. of Electr. Eng., Daebul Univ., Youngam, South Korea

fYear

2001

fDate

2001

Firstpage

63

Lastpage

66

Abstract

In this work, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our experimental results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize flow rate of slurry and to install the high spray bar of de-ionized water (DIW) with high pressure, in order to overcome weak-points of POU depth type filter

Keywords

ULSI; chemical mechanical polishing; dielectric thin films; filtration; integrated circuit metallisation; surface contamination; POU depth-type filter; ULSI; chemical-mechanical polishing; high-pressure de-ionized water spray bar; inter-metal dielectric; micro-defect generation; pad count; particulate contamination; slurry filtration; Chemical processes; Dielectrics; Filtering; Filters; Filtration; Planarization; Plasma measurements; Slurries; Spraying; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on

Conference_Location

Himeji

Print_ISBN

4-88686-053-2

Type

conf

DOI

10.1109/ISEIM.2001.973558

Filename

973558