Title :
Reduction of micro-defects in the inter-metal dielectrics (IMD) chemical mechanical polishing (CMP) for ULSI applications
Author :
Park, Sung-Woo ; Kim, Sang-Yong ; Yong-Jin Sin
Author_Institution :
Dept. of Electr. Eng., Daebul Univ., Youngam, South Korea
Abstract :
In this work, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our experimental results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize flow rate of slurry and to install the high spray bar of de-ionized water (DIW) with high pressure, in order to overcome weak-points of POU depth type filter
Keywords :
ULSI; chemical mechanical polishing; dielectric thin films; filtration; integrated circuit metallisation; surface contamination; POU depth-type filter; ULSI; chemical-mechanical polishing; high-pressure de-ionized water spray bar; inter-metal dielectric; micro-defect generation; pad count; particulate contamination; slurry filtration; Chemical processes; Dielectrics; Filtering; Filters; Filtration; Planarization; Plasma measurements; Slurries; Spraying; Ultra large scale integration;
Conference_Titel :
Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on
Conference_Location :
Himeji
Print_ISBN :
4-88686-053-2
DOI :
10.1109/ISEIM.2001.973558
