Title :
A Novel Micro Thermal Shear Stress Sensor with a Cavity underneath
Author :
Shi, Shali ; Chen, Dapeng ; Bai, Honglei ; Ding, Deyong ; Ou, Yi ; Ye, Tianchun ; Shen, Gongxin
Author_Institution :
Inst. of Microelectron. of Chinese Acad. of Sci., Beijing
Abstract :
This paper describes a micro thermal shear stress sensor with a cavity underneath, based on novel micro bumps on the silicon substrate and sacrificial layer. The micro thermal shear stress sensor has been designed and fabricated by micromachining technology. A poly-silicon strip, 4 mum times 200 mum, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using micro bumps technique on the silicon substrate and sacrificial layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200 mum times 250 mum times 2 mum, is placed between the silicon nitride diaphragm and silicon substrate. Micro bumps formed by silicon isotropic etching in HNA (the system HF, HNO3 and HC 2H3O2) are arrayed in six lines on the silicon substrate, with distances of 32 mum and 26 mum alternately, which exactly support the silicon nitride diaphragm not to be adhered to the substrate
Keywords :
etching; micromachining; microsensors; silicon; silicon compounds; temperature sensors; thermal stresses; 2 micron; 200 micron; 250 micron; 26 micron; 32 micron; 4 micron; HNA system; adiabatic vacuum chamber cavity; microbump technique; micromachining technology; microthermal shear stress sensor; polysilicon strip; sacrificial layer microbumps; silicon isotropic etching; silicon substrate microbumps; thermal sensor element; thin silicon nitride diaphragm; Chemical sensors; Drag; Etching; Fluid flow control; Pressure measurement; Sensor phenomena and characterization; Silicon; Stress measurement; Thermal sensors; Thermal stresses; adhesion; bump; cavity; micro thermal shear stress sensor; silicon isotropic etching;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
DOI :
10.1109/NEMS.2006.334801