• DocumentCode
    2054178
  • Title

    A Novel Micro Thermal Shear Stress Sensor with a Cavity underneath

  • Author

    Shi, Shali ; Chen, Dapeng ; Bai, Honglei ; Ding, Deyong ; Ou, Yi ; Ye, Tianchun ; Shen, Gongxin

  • Author_Institution
    Inst. of Microelectron. of Chinese Acad. of Sci., Beijing
  • fYear
    2006
  • fDate
    18-21 Jan. 2006
  • Firstpage
    466
  • Lastpage
    469
  • Abstract
    This paper describes a micro thermal shear stress sensor with a cavity underneath, based on novel micro bumps on the silicon substrate and sacrificial layer. The micro thermal shear stress sensor has been designed and fabricated by micromachining technology. A poly-silicon strip, 4 mum times 200 mum, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using micro bumps technique on the silicon substrate and sacrificial layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200 mum times 250 mum times 2 mum, is placed between the silicon nitride diaphragm and silicon substrate. Micro bumps formed by silicon isotropic etching in HNA (the system HF, HNO3 and HC 2H3O2) are arrayed in six lines on the silicon substrate, with distances of 32 mum and 26 mum alternately, which exactly support the silicon nitride diaphragm not to be adhered to the substrate
  • Keywords
    etching; micromachining; microsensors; silicon; silicon compounds; temperature sensors; thermal stresses; 2 micron; 200 micron; 250 micron; 26 micron; 32 micron; 4 micron; HNA system; adiabatic vacuum chamber cavity; microbump technique; micromachining technology; microthermal shear stress sensor; polysilicon strip; sacrificial layer microbumps; silicon isotropic etching; silicon substrate microbumps; thermal sensor element; thin silicon nitride diaphragm; Chemical sensors; Drag; Etching; Fluid flow control; Pressure measurement; Sensor phenomena and characterization; Silicon; Stress measurement; Thermal sensors; Thermal stresses; adhesion; bump; cavity; micro thermal shear stress sensor; silicon isotropic etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
  • Conference_Location
    Zhuhai
  • Print_ISBN
    1-4244-0139-9
  • Electronic_ISBN
    1-4244-0140-2
  • Type

    conf

  • DOI
    10.1109/NEMS.2006.334801
  • Filename
    4134996