Photoluminescence properties of hydrogenated amorphous silicon nitride

Author

Kashio, Norihide ; Kato, Haruhisa ; Ohki, Y.

Author_Institution

Waseda Univ., Tokyo

fYear

2001

fDate

2001

Firstpage

79

Lastpage

82

Abstract

We have investigated time-resolved PL spectra and nanosecond-order PL decay characteristics in silicon-rich a-SiN_x:H film and discussed recombination processes of photogenerated carriers. The PL peak energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiN _x:H films

Keywords

amorphous semiconductors; excitons; hydrogen; nonradiative transitions; photoluminescence; plasma CVD coatings; radiative lifetimes; semiconductor materials; semiconductor thin films; silicon compounds; spectral line shift; time resolved spectra; tunnelling; PL peak energy shift; SiN:H; band-tail states; exciton-like mechanism; hydrogenated amorphous silicon nitride; nanosecond-order PL decay; photogenerated carrier recombination processes; photoluminescence; radiative tunneling mechanism; silicon-rich a-SiN_x:H film; time-resolved PL spectra; Amorphous silicon; Delay effects; Photoluminescence; Photonic band gap; Pulse measurements; Refractive index; Space vector pulse width modulation; Strontium; Tail; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on

Conference_Location

Himeji

Print_ISBN

4-88686-053-2

Type

conf

DOI

10.1109/ISEIM.2001.973568

Filename

973568