Title :
Which switch for resonant converters?
Author :
Smith, Carl ; Woodworth, Arthur
Author_Institution :
Int. Rectifier, Oxted, UK
Abstract :
The choice of switch for use in resonant converters depends on several factors: the required current, voltage, frequency and the topology. The main considerations for HEXFET and IGBT in zero current switching (ZCS) and zero voltage switching (ZVS) are discussed. An example of a 1 kW resonant half-bridge running in discontinuous mode using IGBTs running at 250 kHz has been described. Low Vce(on) IGBTs can be operated at frequencies many times greater than their hard switching limits and this will open up a new region of high voltage converter design that was previously not possible with the existing switching devices
Keywords :
bridge circuits; insulated gate bipolar transistors; insulated gate field effect transistors; power semiconductor switches; resonant power convertors; switching circuits; 1 kW; 250 kHz; HEXFET; IGBT; ZCS; ZVS; discontinuous mode; high voltage converter; resonant converters; resonant half-bridge; switch; zero current switching; zero voltage switching;
Conference_Titel :
Resonant Systems, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950048
