Fabrication of n-type β-FeSi2/p-type Si heterojunctions by pulsed laser deposition and their application to NIR photodiodes

n-Type β-FeSi₂ thin films were fabricated on p-type Si(111) substrates by pulsed laser deposition (PLD) at a substrate temperature of 600°C. The epitaxial relationships between the film and substrate were investigated by X-ray diffraction (XRD). Two types of epitaxial relationships co-existed in the film. The n-type β-FeSi₂/p-type Si heterojunction showed a typical rectifying action in the dark and it exhibited a weak response for 1.31-μm irradiation at room temperature.