DocumentCode :
2054793
Title :
Cluster-free B-doped a-Si:H films deposited using SiH4 + B10H14 multi-hollow discharges
Author :
Nakahara, Kenta ; Kawashima, Yuki ; Sato, Muneharu ; Matsunaga, Takeaki ; Yamamoto, Kousuke ; Nakamura, William Makoto ; Yamashita, Daisuke ; Matsuzaki, Hidefumi ; Uchida, Giichiro ; Itagaki, Naho ; Koga, Kazunori ; Shiratani, Masaharu
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fYear :
2010
fDate :
21-24 Nov. 2010
Firstpage :
2216
Lastpage :
2218
Abstract :
We have deposited cluster-free B-doped a-Si:H films using a SiH4+B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R = [B10H14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8 nm/s R = 0.0 % to 2.2 nm/s for R = 0.53%, but SiH emission intensity is almost constant for R = 0 - 2.0%. These results suggest BxHy radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9 eV, being larger than that of conventional B-doped films.
Keywords :
amorphous semiconductors; boron; elemental semiconductors; energy gap; hydrogen; optical constants; plasma CVD; semiconductor growth; semiconductor thin films; silicon; surface chemistry; Si:H,B; cluster-free B-doped a-Si:H films; gas flow rate; multihollow discharge plasma CVD; optical bandgap; plasma emission; surface reaction; amorphous silicon; decaborane; multi-hollow discharges;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
ISSN :
pending
Print_ISBN :
978-1-4244-6889-8
Type :
conf
DOI :
10.1109/TENCON.2010.5686686
Filename :
5686686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2054793
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