Title :
The characteristics of holographic grating in chalcogenide thin films
Author :
Park, Jeong-II ; Park, Jong-Hwa ; Shin, Kyung ; Kim, Jin-Woo ; Lee, Young-Jong ; Chung, Hong-Bay
Author_Institution :
Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
We have investigated the polarization dependence of holographic gratings in chalcogenide Se75Ge25 and As40 Ge10Se15S35 thin films. The films have been irradiated using a linearly polarized He-Ne laser at 633 nm. To observe the etching characteristic, the films have been etched with NaOH solution. Film thicknesses were about 1 μm and 3 μm, and were monitored with a quartz oscillator during deposition and measured with the NKT1200 analyzer. A self-relief grating was formed in As40Ge10Se15S35 thin film
Keywords :
arsenic compounds; chalcogenide glasses; etching; germanium compounds; holographic gratings; laser beam effects; light polarisation; optical films; selenium compounds; semiconductor thin films; sulphur compounds; 1 micron; 3 micron; 633 nm; As40Ge10Se15S35; NKT1200 analyzer; NaOH; NaOH solution etching; Se75Ge25; chalcogenide thin films; diffraction efficiency; etching characteristic; film thickness; holographic grating; linearly polarized He-Ne laser irradiation; polarization dependence; quartz oscillator; self-relief grating; Amorphous materials; Diffraction; Etching; Glass; Gratings; Holographic optical components; Holography; Optical films; Optical polarization; Transistors;
Conference_Titel :
Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on
Conference_Location :
Himeji
Print_ISBN :
4-88686-053-2
DOI :
10.1109/ISEIM.2001.973589
