The characteristics of holographic grating in chalcogenide thin films

Author

Park, Jeong-II ; Park, Jong-Hwa ; Shin, Kyung ; Kim, Jin-Woo ; Lee, Young-Jong ; Chung, Hong-Bay

Author_Institution

Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul, South Korea

fYear

2001

fDate

2001

Firstpage

145

Lastpage

147

Abstract

We have investigated the polarization dependence of holographic gratings in chalcogenide Se₇₅Ge₂₅ and As₄₀Ge₁₀Se₁₅S₃₅ thin films. The films have been irradiated using a linearly polarized He-Ne laser at 633 nm. To observe the etching characteristic, the films have been etched with NaOH solution. Film thicknesses were about 1 μm and 3 μm, and were monitored with a quartz oscillator during deposition and measured with the NKT1200 analyzer. A self-relief grating was formed in As₄₀Ge₁₀Se₁₅S₃₅ thin film

Keywords

arsenic compounds; chalcogenide glasses; etching; germanium compounds; holographic gratings; laser beam effects; light polarisation; optical films; selenium compounds; semiconductor thin films; sulphur compounds; 1 micron; 3 micron; 633 nm; As₄₀Ge₁₀Se₁₅S₃₅; NKT1200 analyzer; NaOH; NaOH solution etching; Se₇₅Ge₂₅; chalcogenide thin films; diffraction efficiency; etching characteristic; film thickness; holographic grating; linearly polarized He-Ne laser irradiation; polarization dependence; quartz oscillator; self-relief grating; Amorphous materials; Diffraction; Etching; Glass; Gratings; Holographic optical components; Holography; Optical films; Optical polarization; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials, 2001. (ISEIM 2001). Proceedings of 2001 International Symposium on

Conference_Location

Himeji

Print_ISBN

4-88686-053-2

Type

conf

DOI

10.1109/ISEIM.2001.973589

Filename

973589