Integrated BiCMOS control circuits for low-power current-mode DC-DC boost converter

Author

Lee, Chan-Soo ; Gendensuren, Munkhsuld ; Cho, Kyoung-Rok ; Kim, Nam-Soo

Author_Institution

Sch. of Electr. & Comput. Eng., Chungbuk Nat. Univ., Cheongju, South Korea

fYear

2012

fDate

20-23 March 2012

Firstpage

1

Lastpage

6

Abstract

This paper introduces the design of integrated BiCMOS current-sensing circuit and amplifier for high-performance DC-DC boost converter. By exploiting the advantage presented by the integration of both CMOS and bipolar devices within same technology, the BiCMOS circuits offers high gain amplifier and accurately sensed inductor current. The error amplifier has BJT differential pair and current sources to obtain a fast response, while the current-sensing circuit exploits a current-mirror instead of op-amplifier as a voltage follower. The test in 0.35 μm BiCMOS process shows that the transient time of the error amplifier is controlled within 10 μsec and the current-sensing circuit can operate with accuracy of higher than 90 % at the frequency from 10 KHz to 200 KHz. The output voltage of 5.5 V is obtained with the ripple ratio within 2%.

Keywords

BiCMOS integrated circuits; DC-DC power convertors; amplifiers; BJT differential pair; BiCMOS control circuits; BiCMOS current-sensing circuit; bipolar devices; current mirror; error amplifier; low-power current-mode DC-DC boost converter; BiCMOS integrated circuits; MOSFET circuits; Mirrors; Power transistors; Resistance; Sensors; Transistors; BiCMOS; boost converter; current-sensing circuit; error amplifier; integrated; voltage follower;

fLanguage

English

Publisher

ieee

Conference_Titel

Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on

Conference_Location

Chemnitz

Print_ISBN

978-1-4673-1590-6

Electronic_ISBN

978-1-4673-1589-0

Type

conf

DOI

10.1109/SSD.2012.6198026

Filename

6198026