DocumentCode :
2054839
Title :
Integrated BiCMOS control circuits for low-power current-mode DC-DC boost converter
Author :
Lee, Chan-Soo ; Gendensuren, Munkhsuld ; Cho, Kyoung-Rok ; Kim, Nam-Soo
Author_Institution :
Sch. of Electr. & Comput. Eng., Chungbuk Nat. Univ., Cheongju, South Korea
fYear :
2012
fDate :
20-23 March 2012
Firstpage :
1
Lastpage :
6
Abstract :
This paper introduces the design of integrated BiCMOS current-sensing circuit and amplifier for high-performance DC-DC boost converter. By exploiting the advantage presented by the integration of both CMOS and bipolar devices within same technology, the BiCMOS circuits offers high gain amplifier and accurately sensed inductor current. The error amplifier has BJT differential pair and current sources to obtain a fast response, while the current-sensing circuit exploits a current-mirror instead of op-amplifier as a voltage follower. The test in 0.35 μm BiCMOS process shows that the transient time of the error amplifier is controlled within 10 μsec and the current-sensing circuit can operate with accuracy of higher than 90 % at the frequency from 10 KHz to 200 KHz. The output voltage of 5.5 V is obtained with the ripple ratio within 2%.
Keywords :
BiCMOS integrated circuits; DC-DC power convertors; amplifiers; BJT differential pair; BiCMOS control circuits; BiCMOS current-sensing circuit; bipolar devices; current mirror; error amplifier; low-power current-mode DC-DC boost converter; BiCMOS integrated circuits; MOSFET circuits; Mirrors; Power transistors; Resistance; Sensors; Transistors; BiCMOS; boost converter; current-sensing circuit; error amplifier; integrated; voltage follower;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
Conference_Location :
Chemnitz
Print_ISBN :
978-1-4673-1590-6
Electronic_ISBN :
978-1-4673-1589-0
Type :
conf
DOI :
10.1109/SSD.2012.6198026
Filename :
6198026
Link To Document :
بازگشت